Organic semiconductor device based on phthalocyanine

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357 231, 357 65, H01L 2928

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active

049874306

ABSTRACT:
The present invention relates to an organic semiconductor device based on phthalocyanine. According to the invention, the device comprises a substrate constituted by a layer (10) of a conductive material covered by a layer (20) of a dielectric material, and a coating deposited on the layer of dielectric material and comprising an extrinsic molecular semiconductor (30) constituted by a monophthalocyanine of a divalent metal or by a hydrogenated monophthalocyanine, and an intrinsic molecular semiconductor (40) constituted by a phthalocyanine giving rise to free radicals.

REFERENCES:
patent: 4164431 (1979-08-01), Tang
Toute L'Electronique, No. 513, Apr. 1986, p. 87, FET Organique.
J. Am. Chem. Soc., vol. 109, No. 17, pp. 5119-5122, 1987, Turek et al., A New Series of Molecular Semiconductors: Phthalocyanine Radicals.
EP-A-0 076 060 (ICI), p. 4, line 10-p. 5, line 24; p. 8, line 29-p. 11, line 15; Example 5; FIGS. 8a, 8b.
Synthetic Metals, Tome 18, 1987, pp. 683-688, Lausanne, CH; J. J. Andre et al.: "Molecular Semiconductors and Junction Formation: Phthalocyanine Derivatives" en entier.

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