Organic semiconductor device

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

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Details

C438S623000, C257S040000, C257SE51002, C257SE51024, C257SE21299, C313S504000

Reexamination Certificate

active

07811852

ABSTRACT:
An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

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Y. Yoshiaki et al., “Electrical characteristics of a vertical polymer light-emitting transistor with a PEDOT: PSS gate electrode”, 29p-YG-13, Extended Abstract (The 52ndSprint Meeting, 2005); The Japan Society of Applied Physics and Related Societies, Mar. 29, 2005, p. 1500 (with English translation).

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