Organic semiconductor device

Details Organic semiconductor device Organic semiconductor device

2005-03-22

2005-03-22

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S330000, C257S332000

Reexamination Certificate

active

06870182

ABSTRACT:
An organic semiconductor device of the present invention has an organic semiconductor layer disposed within a depression formed in a substrate; a drain electrode and a source electrode; and a gate electrode to face the organic semiconductor layer with a gate insulating layer interposed. Alternatively, an organic semiconductor device of the present invention has an insulating layer disposed on a substrate; an organic semiconductor layer disposed within a depression formed in the insulating layer; a drain electrode and a source electrode; and a gate electrode disposed to face the organic semiconductor layer with a gate insulating layer interposed.

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Solid State Physics, 36 vol. 3, p. 139-146 (2001).

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