Organic semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257S350000

Reexamination Certificate

active

07342245

ABSTRACT:
An organic semiconductor device includes at least p-type and n-type channel organic semiconductor elements. Each organic semiconductor element includes a pair of a source electrode and a drain electrode which are facing each other, an organic semiconductor layer deposited between the source electrode and the drain electrode such that a channel can be formed therebetween, and a gate electrode which applies a voltage through a gate insulating layer to the organic semiconductor layer provided between the source electrode and the drain electrode. The source electrode and the drain electrode of the p-type channel organic semiconductor element are made of materials having values of work function higher than those of the source electrode and the drain electrode of the n-type channel organic semiconductor element respectively.

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A. Dodabalapur et al., “Complementary Circuits With Organic Transistors,” Applied Physics Letters, vol. 69, No. 27, Dec. 30, 1996, pp. 4227-4229.

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