Organic-semiconductor-based infrared receiving device

Details Organic-semiconductor-based infrared receiving device Organic-semiconductor-based infrared receiving device

2011-07-05

2011-07-05

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S184000, C257SE51012, C250S338400

Reexamination Certificate

active

07973308

ABSTRACT:
An organic-semiconductor-based infrared receiving device comprises an electrode layer having a positive layer and a negative layer to form an electric field, and a transport layer located between the positive and negative layers and having a first and a second predetermined material combined in a predetermined ratio. The energy of infrared light from a light source is received at an interface between the first and second materials. The thickness of the transport layer can be increased to enhance the light absorbance in the infrared light range to form electron-hole pairs, which are then parted to form a plurality of electrons and holes driven by the electric field to move to the negative layer and the positive layer, respectively, so that a predetermined photocurrent is generated.

REFERENCES:
patent: 5523555 (1996-06-01), Friend et al.
patent: 7268363 (2007-09-01), Lenhard et al.

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