Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Reexamination Certificate
2007-03-20
2007-03-20
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
C257S476000, C257S485000
Reexamination Certificate
active
10809135
ABSTRACT:
An organic Schottky diode includes a polycrystalline organic semiconductor layer with a rectifying contact on one side of the layer. An amorphous doped semiconductor layer is placed on the other side of the polycrystalline organic semiconductor layer, and it acts as a buffer between the semiconductor layer and an ohmic contact layer.
REFERENCES:
patent: 6114088 (2000-09-01), Wolk et al.
patent: 2003/0105365 (2003-06-01), Smith et al.
patent: 1 017 118 (2000-07-01), None
patent: WO 00/17911 (2000-03-01), None
E. A. Silinsh and V. Capek, “Organic Molecular Crystals” AIP Press, New York, 1994.
Y. Shirota, T. Kobata, and N. Noma, “Starburst Molecules For Amorphous Molecular Materials, 4,4′, 4″-tris(N,N-diphenylamino)triphenylamine and 4,4′4″-Tris(N-(3-methylphenyl)-N-phenylamino)triphenylamine”, Chemistry Letters, The Chemical Society of Japan, vol. 7, pp. 1145-1148, 1989.
Yasuhiko Shirota, “Organic Materials for Electronic and Optoelectronic Devices”, Journal of Materials Chemistry, vol. 10, pp. 1-25, 2000.
M. Pfeiffer, A. Beyer, T. Frit, and K. Leo, “A Controlled Doping Of Phthalocyanine Layers By Cosublimation With Acceptor Molecules: A Systematic Seebeck And Conductivity Study”, Applied Physics Letters, vol. 73, No. 22, pp. 3202-3204, Nov. 30, 1998.
X. Zhou, J. Blochwitz, M. Pfeiffer, A. Nollau, T. Fritz, and K. Leo, “Enhanced Hole Injection Into Amorphous Hole-Transport Layers Of Organic Light-Emitting Diodes Using Controlled P-Type Doping,” Advanced Functional Materials, vol. 11, No. 4, pp. 310-314, Aug. 2001.
X. Zhou, M. Pfeiffer, J. Blochwitz, A. Werner, A. Nollau, T. Fritz, and K. Leo, “Very-Low-Operating-Voltage Organic Light-Emitting Diodes Using A P-Doped Amorphous Hole Injection Layer.” Applied Physics Letters, vol. 78, No. 4, pp. 410-412, Jan. 22, 2001.
S. M. Sze, Physics of Semiconduct of Devices, Second Edition, John Wiley & Sons, Inc. 1981.
Y. S. Lee, J. H. Park, J. S. Choi, “Electrical Characteristics Of Pentacene-Based Schottky Diodes”, Optical Materials, vol. 21, pp. 433-437, 2002.
J. Blochwitz, M. Pfeiffer, T. Fritz, K. Leo, “Low Voltage Organic Light Emitting Diodes Featuring Doped Phthalocyanine As Hole Transport Material”, Applied Physics Letters, vol. 73, No. 6, pp. 729-731, Aug. 10, 1998.
J. Dreschel, M. Pfeiffer, X. Zhou, A. Nollau, K. Leo, “Organic Mip-Diodes By p-Doping Of Amorphous Wide-Gap Semiconductors:CVand Impedance Spectroscopy”, Synthetic Metals, vol. 127, pp. 201-205, Mar. 2002.
A. R. Brown, D. M. de Leeuw, E. E. Havinga, A. Pomp, “A Universal Relation Between Conductivity And Field-Effect Mobility In Doped Amorphous Organic Semiconductors”, Synthetic Metals, vol. 68, pp. 65-70, 1994.
C. P. Jarrett, R. H. Friend, A. R. Brown, and D. M. de Leeuw, “Field Effect Measurements In Doped Conjugated Polymer Films: Assessment Of Charge Carrier Mobilities”, Journal of Applied Physics, vol. 77, No. 12, pp. 6289-6294, Jun. 15, 1995.
J. Paloheimo, P. Kulvalainen, H. Stubb, E. Vuorimaa, and P. Yli-Lahti, Appl. Phys. Lett., “Molecular Field-Effect Transistors Using Conducting Polymer Langmuir-Blodgett Films”, vol. 56, No. 12, pp. 1157-1159, Mar. 19, 1990.
K. Hoshimono, S. Fujimori, S. Fujita, and S. Fujita, “Semiconductor-Like Carrier Conduction and Its Field-Effect Mobility in Metal-Doped C60Think Films”, Japanese Journal of Applied. Physics, vol. 32, No. 8A, pp. L1070-L1073, Aug. 1, 1993.
A. Nollau, M. Pfeiffer, T. Fritz, and K. Leo. Journal of Applied Physics, “Controlledn-Type Of Doping Of A Molecular Organic Semiconductor: Naphthalenetetracarboxylic Dianhydride (NTCDA) Doped With bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)”, vol. 87, No. 9, pp. 4340-4343, May 1, 2000.
A. Werner, F. Li, K. Harada, M. Pfeiffer, T. Fritz, K. Leo, and S. Machill, “n-Type Doping of Organic Thin Films Using Cationic Dyes”, Advanced Functional Materials, vol. 14, No. 3, pp. 255-260, Mar. 2004.
Z. Bao, A. J. Lovinger, and J. Brown, “New Air-Stablen-Channel Organic Thin Film Transistors”, Journal of the American Chemical Society, vol. 120, No. 1, pp. 207-208, 1998.
P. R. L. Malenfant, C. D. Dimitrakopoulos, J. Gelorme, L. L. Kosbar, and T. O. Graham, “N-Type Organic Thin-Film Transistor With High Field-Effect Mobility Based On A N,N′-dialkyl-3,4,9,10-perylene Tetracarboxylic Diimide Derivative”, Applied Physics Letters, vol. 80, No. 14, pp. 2517-2529, Apr. 8, 2002.
U.S. Appl. No. 10/620,027 filed Jul. 15, 2003, entitled “Bis(2-Acenyl)Acetylene Semiconductors”.
U.S. Appl. No. 10/641,730, filed Aug. 15, 2003, entitled “Acene-Thiophene Semiconductors”.
Pfeiffer, “Doped Organic Semiconductors: Physics and Application in Light Emitting Diodes”, Organic Electronics, (2003), pp. 89-103, vol. 4, Elsevier B. V.
Blochwitz, “Non-Polymeric OLEDs With a Doped Amorphous Hole Transport Layer and Operating Voltages Down to 3.2 V to Achieve 100 cd/m2”, Synthetic Metals, (2002), pp. 169-173, vol. 127, Elsevier Science B. V.
Roman, “Polymer Diodes With High Rectification”, Applied Physics Letters, (Nov. 29, 1999), pp. 3557-3559, vol. 75, No. 22, American Institute of Physics.
Ouyang, “On the Mechanism of Conductivity Enhancement in Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Film Through Solvent Treatment”, Polymer, (2004), pp. 8443-8450, vol. 45.
Ionescu-Zanetti, “Semiconductive Polymer Blends: Correlating Structure With Transport Properties at the Nanoscale”, Advanced Materials, (Mar. 5, 2004), pp. 385-389, vol. 16, No. 5, Wiley-VCH Verlag GmbH & Co. KgaA, Weinheim.
Baude Paul F.
Haase Michael A.
Lee Tzu-Chen
3M Innovative Properties Company
Kokko Kent S.
Vu Hung
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