Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-10-03
2011-11-01
Kebede, Brook (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51017, C257SE51018
Reexamination Certificate
active
08049207
ABSTRACT:
A method for manufacturing an organic electronic device including a stack of layers including a release layer, the stack having a lateral structure on a substrate, at least one of the layers being an organic material layer. A method includes with the step of providing a stamp with at least one protrusion of the surface area corresponding to the lateral structure. The stack of layers is deposited with a first face on the surface area of the protrusion of the stamp. A second face of the stack that is opposite to the first face is brought into adhesive contact with the substrate. The stamp is released from the stack.
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USPTO U.S. Appl. No. 11/214,334, filed Aug. 29, 2005 to Siefried F. Karg et al, entitled “Organic Optoelectronic Device”, Office Action dated Jun. 27, 2007.
USPTO U.S. Appl. No. 11/214,334, filed Aug. 29, 2005 to Siefgried F. Karg et al., entitled “Organic Optoelectronic Device”, Notice of Allowance/Supplemental Notice of Allowance dated Aug. 8, 2007 and Oct. 25, 2007 respectively.
Karg Siegfried F.
Michel Bruno
Riel Heike E.
Riess Walter H.
Chiu Steven
International Business Machines - Corporation
Kebede Brook
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