Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-04-11
2006-04-11
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S288000, C257S072000
Reexamination Certificate
active
07026643
ABSTRACT:
The invention provides a device comprising an improved n-channel semiconducting film. This film consists of a perylene tetracaboxylic acid diimide compound and was deposited onto substrates by vacuum sublimation. Thin film transistor devices comprising such films as the semiconducting channel exhibit a field effect electron mobility greater than 0.01 cm2/Vs and an on/off ratio of 10000 and higher.
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Dimitrakopoulos Christos Dimitrios
Gelorme Jeffrey Donald
Graham Teresita Ordonez
Kosbar Laura Louise
Lucien Malenfant Patrick Roland
International Business Machines - Corporation
Morris Daniel P.
Riddles Alvin J.
Schillinger Laura M.
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