Organic material photodiode

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

Reexamination Certificate

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C257S040000, C257SE31001

Reexamination Certificate

active

07906797

ABSTRACT:
The present invention relates to a photodiode including a photo-active layer, which layer includes at least one electron donating material, and at least one fullerene derivative as an electron accepting material. The present invention further relates to a method for making such a photodiode, to a photo-active layer and to a fullerene derivative.

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