Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-12-09
2008-08-05
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S083000, C257SE33064, C257SE51022, C257SE51026, C313S500000, C313S505000
Reexamination Certificate
active
07408192
ABSTRACT:
An organic light emitting display device and a method of fabricating the same. A dummy pattern is formed in an emission region to increase the step height of the emission region by an electrode material while a thin film transistor is fabricated, so that a distance between a pixel electrode and a donor film is decreased during fabrication of an organic layer. This reduced distance reduces laser energy for transfer using laser-induced thermal imaging, thus improving life span and efficiency of the device. Further, the pixel electrode can extend into a thin film transistor region and a capacitor region, thus enhancing an aperture ratio.
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European Office Action of the European Patent Application No. 05 11 1816, issued on May 24, 2006.
Bushnell , Esq. Robert E.
Cruz Leslie Pilar
Samsung SDI & Co., Ltd.
Tran Minh-Loan
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