Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-02-05
2009-02-10
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S099000
Reexamination Certificate
active
07488976
ABSTRACT:
Provided is an organic light emitting device comprising: a substrate; and a plurality of sub-pixels, each sub-pixel comprising a thin film transistor formed on the substrate; a planarization layer formed on the thin film transistor, and having a contact hole exposing a portion of a source electrode or a drain electrode of the thin film transistor; a contact electrode formed on the planarization layer, and electrically connected with the source electrode or the drain electrode of the thin film transistor through the contact hole; a first electrode spaced apart from the contact electrode, the first electrode formed on the planarization layer; an insulating layer formed on the first electrode and the contact electrode, the insulating layer comprising a first opening exposing a portion of the first electrode and a second opening exposing a portion of the contact electrode; a light emitting layer formed in the first opening; a second electrode formed on the light emitting layer and electrically connected with a portion of the contact electrode through the second opening.
REFERENCES:
patent: 6727645 (2004-04-01), Tsujimura et al.
Jung Myung Jong
Kang Sun Kil
Kim Changnam
Kim Do Youl
Kim Honggyu
LG Display Co. Ltd.
Morgan & Lewis & Bockius, LLP
Prenty Mark
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