Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2008-03-12
2010-12-28
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE33001, C257SE25008, C257SE51018, C438S082000, C438S099000
Reexamination Certificate
active
07858975
ABSTRACT:
An OFET includes a ferroelectric gate dielectric permitting electrical reprogramming, such as to implement an electrically re-programmable array logic (PAL) or a field-programmable gate array (FPGA). Methods of constructing such an OFET, PAL, or FPGA, can including roll printing. An OFET on a piezoelectric substrate provides local amplification in an active matrix. Methods of constructing such an OFET on a piezoelectric substrate can including rolling printing. Techniques permit direct measurement of trap distribution, such as across the channel length of an OFET device. Techniques permit direct measurement of the size and location of an electrically active grain structure in OFET devices. Techniques permit confirmation of the mechanism of operation of a number of OFET techniques, including use of silanes or thiols, or OFET operation or aging. Techniques provide an internal circuit probe, such as for a ferroelectric gate dielectric OFET or a piezoelectric substrate OFET, for example.
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Lee Hsien-ming
Schwegman Lundberg & Woessner, P.A.
The Trustees of Columbia University In the City of New York
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