Organic field effect element having organic layers with differen

Details Organic field effect element having organic layers with differen Organic field effect element having organic layers with differen

1992-08-13

1994-10-11

Sikes, William L.

Optical: systems and elements

Holographic system or element

Using a hologram as an optical element

257 40, 257607, 257642, G02F 1133, H01L 29784

Patent

active

053552350

ABSTRACT:
There is disclosed an organic field effect element having an large ON/OFF current ratio. The organic field effect element includes a source electrode and a drain electrode formed separately to each other, a first organic layer constituting a channel between the source and drain electrodes, a second organic layer formed to be adjacent to the channel and having a carrier concentration different from that of the first organic layer, and a gate electrode formed to be opposite to the channel through the second organic layer. Carriers are transferred between the second and first organic layers in response to a voltage applied to the gate electrode to change an electrical conductivity of the channel.

REFERENCES:
patent: 4873556 (1989-10-01), Hyodo et al.
patent: 5107308 (1992-04-01), Koezuka et al.
patent: 5153681 (1992-10-01), Kishimoto et al.
patent: 5206525 (1993-08-01), Yamamoto et al.
Patent Abstracts of Japan, vol. 14, No. 16 (E-872), Jan. 12, 1990, & JP-A-12 59 563, Oct. 17, 1989, Tsumura Akira, et al., "Field Effect Transistor".
Japanese Journal of Applied Physics, vol. 19, No. 5, 1980, 225-227, T. Mimura, et al. "A New Field-Effect Transistor with Selectively Doped GaAs
-AlxGal-xAs Heterojunctions."
Applied Physics Letters, vol. 49, No. 18, pp. 1210-1212, 1986, A. Tsumura, et al. "Macromolecular Electronic Device: Field-Effect Transistor with a Polythiophene Thin Film."

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