Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-04-26
2005-04-26
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S103000, C428S917000, C313S504000, C252S301260
Reexamination Certificate
active
06885026
ABSTRACT:
Disclosed is an electroluminescent device comprising a light emitting layer comprising a boron complex wherein the boron is bonded to a nitrogen atom of a 6-membered heteroaromatic ring group and to a nitrogen atom of a 5-membered heteroaromatic ring group, provided that the 5- and 6-membered heteroaromatic ring groups are further connected by a methene bridge, and provided further that the 5-membered heteroaromatic ring contains at least one additional heteroatom that is divalent or trivalent. Also disclosed is a device containing the electroluminescent device and a process for emitting light using the device.
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Helber Margaret J.
Vargas J. Ramon
Crane Sara
Eastman Kodak Company
Kluegel Arthur E.
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