Organic electronic rectifying devices

Compositions – Radioactive compositions – Nuclear reactor fuel

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Details

252 623Q, 260396R, 260396N, 260429J, H01L 2928

Patent

active

039538745

ABSTRACT:
There are described herein organic electronic devices of the acceptor-donor (A-D), acceptor-donor-acceptor (A-D-A), donor-acceptor-donor (D-A-D), acceptor-donor-acceptor-donor (A-D-A-D), types analogous to the p-n, p-n-p, n-p-n and p-n-p-n types in typical semiconductor devices. The A-D device suitably comprises a support or substrate upon which there is provided a layer of a conductive metal. On this metallic layer, there is provided in a thickness of about 25 to 50 Angstroms, a barrier layer organic compound. On the latter compound, there is provided a deposited metal conductor, the metal depositing suitably being effected by a technique such as vapor deposition. The A-D-A and D-A-D devices comprise a semiconductor or metallic body, on each surface of which there is provided in about a 25 to 50 Angstrom thickness, the aforementioned barrier layer compound. On each compound layer there is deposited a metal conductor. The barrier layer compound suitably is one whose molecules consist of two nonsymmetric, i.e., not same energy level, reversible redox portions separated by a tunneling bridge.

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