Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2008-04-29
2008-04-29
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51019, C257SE51026, C313S501000, C438S082000, C438S099000
Reexamination Certificate
active
07365360
ABSTRACT:
An organic electronic device. The device includes a first electrode to inject or extract hole, the first electrode including a conductive layer and an n-type organic compound layer disposed on the conductive layer, a second electrode to inject or extract electron, a p-type organic compound layer disposed between the n-type organic compound layer and the second electrode. The p-type organic compound layer forms an NP junction between the n-type organic compound layer and the p-type organic compound layer. The energy difference between a lowest unoccupied molecular orbital (LUMO) energy of the n-type organic compound layer and a Fermi energy of the conductive layer is about 2 eV or less, and the energy difference between the LUMO energy of the n-type organic compound layer and a highest unoccupied molecular orbital (HOMO) energy of the p-type organic compound layer is about 1 eV or less.
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PCT International Search Report; International Application No. PCT/KR2005/001381; International filing date May 11, 2005; Date of mailing; Aug. 18, 2005.
Choi Hyeon
Han Young Kyu
Jang Jun Gi
Jeon Sang Young
Kang Minsoo
Baumeister B. William
LG. Chem, Ltd.
McKenna Long & Aldridge LLP
Such Matthew W.
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