Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-11-06
2007-11-06
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S295000, C257S003000, C257S004000, C257SE45002
Reexamination Certificate
active
11185860
ABSTRACT:
In an organic electronic circuit, particularly memory circuit with an organic ferroelectric or electret material the active material comprises fluorine atoms and consists of various organic materials. The active material is located between first and second electrode sets constituting respectively bottom and top electrodes of the device. A cell with a capacitor like structure is defined in the active material and can be accessed for an addressing operation via the electrodes. At least one top electrode comprises a layer of gold in contact with active material. A second layer on the top electrode comprises conducting material different from gold or can alternatively also be made of gold. A via connection extends between the second electrode layer and a bottom electrode or another electrode in the bottom electrode layer. In case the second electrode layer is made of gold the via metal of the via connection can also be gold and integral with the second electrode layer. In a method for establishing a top via electrode connection in the device, a first top electrode layer of gold is deposited and a via hole etched therethrough and down to the bottom electrode layer, and via metal is deposited to form a via connection and then a second top electrode layer is deposited above the first electrode layer of gold and contacting the via connection.
REFERENCES:
patent: 5146299 (1992-09-01), Lampe et al.
patent: 6955939 (2005-10-01), Lyons et al.
patent: 2006/0018175 (2006-01-01), Liljedahl et al.
patent: 27 05 407 (1977-08-01), None
patent: 10-81951 (1998-03-01), None
patent: WO-03/044801 (2003-05-01), None
patent: WO-03/052762 (2003-06-01), None
Haisheng Xu et al., J. Appl. Polymer Science, vol. 88, 2003, pp. 1416-1419.
D K Das-Gupta et al., J. Appl. Phys. D: Appl Phys., vol. 23, 1990, pp. 1485-1490.
P. Bloβ et al., Rev. Sci. Instrum., vol. 65, No. 5, 1994, pp. 1541-1550.
F. Feller et al., Applied Physics Letters, vol. 79, No. 6, 2001, pp. 779-781.
Gustafsson Goran
Liljedahl Rickard
Ho Tu-Tu
Thin Film Electronics ASA
LandOfFree
Organic electronic circuit and method for making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Organic electronic circuit and method for making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Organic electronic circuit and method for making the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3838458