Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-08-23
2011-08-23
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S059000, C257S072000
Reexamination Certificate
active
08003978
ABSTRACT:
The invention prevents a photocurrent due to external light and a variation in characteristics of transistors or a failure by a short circuit due to the influence of a back channel. A light shield film made of a nonconductive material is formed on an insulation substrate. A back gate insulation film is formed covering the light shield film. An active layer is formed on this back gate insulation film. A gate insulation film is formed covering the active layer, and a gate electrode is formed on the gate insulation film. The light shield film is disposed covering the active layer with the back gate insulation film interposed therebetween, having a function of shielding the active layer from external light entering through the insulation substrate.
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Ho Anthony
Lee Eugene
Morrison & Foerster / LLP
Sanyo Electric Co,. Ltd.
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