Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-03-22
2005-03-22
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S098000, C257S102000, C257S040000, C257S010000, C257S099000, C257S101000
Reexamination Certificate
active
06870198
ABSTRACT:
An organic EL device which includes a first electrode, a hole transport layer, a light-emitting layer, and the second electrode, wherein the light-emitting layer includes a mixed light-emitting film of a host substance, which is capable of transferring an energy to another light-emitting polymer by absorbing the energy, and a phosphorescent dopant which is capable of emitting light using a triplet state after absorbing the energy received. Accordingly, the light-emitting layer can be patterned, and a color purity and light-emitting characteristics of a full color organic polymer EL device, produced through a laser induced termal imaging operating, can be improved.
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Chin Byung Doo
Kim Mu Hyun
Kwon Jang Hyuk
Lee Seong Taek
Suh Min Chul
Flynn Nathan J.
Forde Remmon R.
Samsung SDI & Co., Ltd.
Stein, McEwen & Bui LLP
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