Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-06-28
2011-06-28
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S098000, C257SE51022, C438S082000, C438S099000
Reexamination Certificate
active
07968874
ABSTRACT:
Disclosed is an organic electroluminescent device (organic EL device) that utilizes phosphorescence and is improved in luminous efficiency and fully secured of driving stability. The organic EL device comprises an anode, an organic layer containing a hole-transporting layer, a light-emitting layer, and an electron-transporting layer, and a cathode piled one upon another on a substrate while the hole-transporting layer is disposed between the light-emitting layer and the anode and the electron-transporting layer is disposed between the light-emitting layer and the cathode. The light-emitting layer comprises an aluminum heterocomplex or dimeric complex of deuterated substituted or unsubstituted 2-methyl-8-hydroxyquinoline (Me8HQ-D) in which the hydrogen atoms in the methyl group of substituted or unsubstituted 2-methyl-8-hydroxyquinoline (Me8HQ) are deuterated as a host material and an organic metal complex containing at least one metal selected from groups 7 to 11 of the periodic table as a guest material.
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Katayama Atsuhiko
Matsuo Shinji
Miyazaki Hiroshi
Noguchi Katsuhide
Birch & Stewart Kolasch & Birch, LLP
Dang Phuc T
Nippon Steel Chemical Co. Ltd.
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