Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-05-03
2011-05-03
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S103000, C257SE51028, C257SE51026, C257SE51027, C549S059000
Reexamination Certificate
active
07935962
ABSTRACT:
Disclosed herein is an organic electroluminescent device including: an anode; a cathode; and an organic layer including a light-emitting layer, a naphthacene compound layer containing a naphthacene compound, and an electron transport layer; the light-emitting layer being composed of a light-emitting guest material and an aromatic hydrocarbon compound having the skeleton of anthracene, and the naphthacene compound layer containing no less than 80 wt % of naphthacene compound represented by the formula (1) below and having a thickness of 0.5 to 10 nm and being in contact with that side of the electron transport layer which faces the light-emitting layer.
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Higo Tomoyuki
Kijima Yasunori
Matsunami Shigeyuki
Ho Tu-Tu V
SNR Denton US LLP
Sony Corporation
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