Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-01-18
2005-01-18
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S027000, C438S029000, C438S030000, C438S048000
Reexamination Certificate
active
06844210
ABSTRACT:
A method of manufacturing an organic electroluminescence device containing an organic layer formed between electrodes, at least one of which is a transparent electrode, the method including a step of forming the transparent electrode and the organic layer that satisfies the following inequality (a) or inequality (b) or both:in-line-formulae description="In-line Formulae" end="lead"?Min−20 nm<t<Min+20 nm (a)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?Max−20 nm<t<Max+20 nm (b)in-line-formulae description="In-line Formulae" end="tail"?wherein t is the total optical path length (nm), Min is the optical path length (nm) at which the CIEx chromaticity coordinates or CIEy chromaticity coordinates measured according to JIS Z 8701 exhibit a minimum value, and Max is the optical path length (nm) at which the CIEx chromaticity coordinates or CIEy chromaticity coordinates measured according to JIS Z 8701 exhibit a maximum value.
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Eida Mitsuru
Fukuoka Kenichi
Idemitsu Kosan Co. Ltd.
Lee Hsien-Ming
Parkhurst & Wendel L.L.P.
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