Organic electro luminescence device and fabrication method...

Details Organic electro luminescence device and fabrication method... Organic electro luminescence device and fabrication method...

2008-03-25

2008-03-25

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S059000, C257S072000, C257SE51005, C438S048000, C438S128000, C438S149000, C438S151000, C438S157000, C438S283000

Reexamination Certificate

active

11119521

ABSTRACT:
An organic electro luminescence device is provided. A thin film transistor (TFT) is formed within a sub-pixel region defined by a gate line and a data line on a substrate. A passivation layer and a first electrode are sequentially formed on the substrate where the TFT is formed. A contact hole is formed at a predetermined portion of the passivation layer and the first electrode so as to expose a drain electrode of the TFT. An electrode separator and a buffer layer are misaligned with the gate line by a predetermined position, such that an emission region corresponding to the sub-pixel and a region including the contact hole of the TFT are separated. An organic electro luminescent layer is formed within a region defined by the buffer region. A second electrode is formed on the organic electrode luminescent layer and is connected to the drain electrode of the TFT through the contact hole.

REFERENCES:
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patent: 6919680 (2005-07-01), Shimoda et al.
patent: 2002/0134979 (2002-09-01), Yamazaki et al.
patent: 2003/0234424 (2003-12-01), Suzawa et al.
patent: 2001-117509 (2001-04-01), None
patent: 0365519 (2006-12-01), None
patent: WO 02078101 (2002-10-01), None

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