Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-09-19
1995-07-25
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 14, 257 22, 257628, H01L 2904, H01L 29161
Patent
active
054364680
ABSTRACT:
On a substrate having a surface slightly tilted by an angle .alpha. within the range of from 0.5 to 10 degrees from the (110) plane in the <00-1> direction, a superlattice structure having a periodicity in both <110> and <001> directions is formed. Various band structures are possible by selecting an appropriate constituent material and periodicity for the superlattice structure. When current flows in a direction without periodicity, a very high mobility is obtained as a result of suppressed alloy scattering. If current is caused to flow in a direction with periodicity, and the periodicity is properly selected, optical phonon scattering can also be suppressed.
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Nakamura Satoshi
Nakata Yoshiaki
Ueda Osamu
Fujitsu Limited
Saadat Mahshid D.
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