Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-12-05
2010-10-19
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S094000, C257S098000, C252S30140F
Reexamination Certificate
active
07816663
ABSTRACT:
A silicate phosphor prepared from Mg2Me+20.5Ln3Si2.5O12-2yN−3yF−1y, in which Me+2=Ca, Sr, Ba, Ln=Sc, Lu, Er, Ho, excited by one single ion or an ion pair of d, f-elements such as Ak+n=Cu+1, Ce+3, Eu+2, Ag+1, Mn+2. The phosphor has a cubic garnet architecture prepared by solid phase synthesis, and radiates at green, green-yellow, yellow-orange spectrum regions. When mixed with (Y,Gd,Ce)3Al5O12substrate-based phosphor, the compound mixture has warm white radiation and color temperature T<4000K with high luminous intensity and high luminescence efficiency. The invention also provides a warm white semiconductor using the silicate phosphor.
REFERENCES:
patent: 7713442 (2010-05-01), Tian et al.
Lo Wei-Hung
Naum Soshchin
Tsai Chi-Ruei
Hsu Chen-Pei
Kuo W. Wendy
Lo Wei-Hung
Muncy Geissler Olds & Lowe, PLLC
Tran Minh-Loan T
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