Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2007-10-15
2009-12-29
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S553000, C257S557000, C257S561000, C257SE29033
Reexamination Certificate
active
07638856
ABSTRACT:
Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.
REFERENCES:
patent: 6222951 (2001-04-01), Huang
patent: 6229189 (2001-05-01), Yap et al.
Hong Seon Eui
Kim Bo Woo
Kim Yong Won
Nam Eun Soo
Oh Myung Sook
Electronics and Telecommunications Research Institute
Ladas & Parry LLP
Louie Wai-Sing
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