Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-11-20
2007-11-20
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S183000, C257S194000
Reexamination Certificate
active
11282339
ABSTRACT:
Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.
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“A 5 Gb/s Monolithically Integrated Lightwave Transmitter with 1.5 μm Multiple Quantum Well Laser and HBT Driver Circuit,” K.-Y. Liou et al, IEEE Phototronics Technology Letters, vol. 3, No. 10, Oct. 1991, pp. 928-930, © 1991 IEEE.
“Monolithic Integrated Laser DHBT OEICs for Optical Fibre Communication,” E. Kühn et al, Indium Phosphide and Related Materials, Third International Conference, Apr. 8-11, 1991, pp. 419-422.
Hong Seon Eui
Kim Bo Woo
Kim Yong Won
Nam Eun Soo
Oh Myung Sook
Electronics and Telecommunications Research Institute
Ladas & Parry LLP
Louie Wai-Sing
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