Optoelectronic thin-film chip

Details Optoelectronic thin-film chip Optoelectronic thin-film chip

2011-08-02

2011-08-02

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S088000, C257S431000, C257S432000, C257SE33067, C257SE33068

Reexamination Certificate

active

07989830

ABSTRACT:
An optoelectronic thin-film chip is specified, comprising at least one radiation-emitting region (8) in an active zone (7) of a thin-film layer (2) and a lens (10, 12) disposed downstream of the radiation-emitting region (8). The lens is formed by at least one partial region of the thin-film layer (2), the lateral extent (Φ) of the lens (10, 12) being greater than the lateral extent of the radiation-emitting region (δ). A method for producing such an optoelectronic thin-film chip is furthermore specified.

REFERENCES:
patent: 2002/0017652 (2002-02-01), Illek et al.
patent: 2006/0138439 (2006-06-01), Bogner et al.
patent: 1 221 725 (2002-01-01), None
patent: 61-19181 (1986-01-01), None
“Preparation and Properties of Monolithically Integrated Lenses on InGaAsP/InP Light-Emitting Diodes”, Electronics Letters, vol. 18, No. 19, pp. 831-832, 1982.
I. Schnitzer et al., “30% external quantum efficiency from surface textured, thin-film light-emitting diodes”, Appl. Physics Letters, vol. 63, No. 18, pp. 2174-2176, Oct. 18, 1993.

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