Optoelectronic switch with a power threshold and its control pro

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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250211J, 250211R, 357 29, 357 30, 357 31, G02B 523, G01T 124, H01L 2714, H01J 4014

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active

047814420

ABSTRACT:
The invention relates to a power threshold optoelectronic switch and its control process. Under the action of a pulse-type light beam, as from a given power threshold, said switch makes it possible to establish a short-circuit between first and second electrodes spaced so as to form an interelectrode gap. The switch comprises means for applying a supply voltage to the first electrode, a semiconducting guiding layer placed on an insulating substrate, whereby the electrodes are placed on said layer and an optical diffraction grating etched in the guiding layer in the interelectrode gap. The nature and thickness of the guiding layer and the spacing of the grating, as well as the angle of incidence of the beam are chosen so as to obtain, during the passage of power of the light beam through the power threshold, the rapid passage from a very weak coupling state of the incident light in the guiding layer to a resonant coupling making it possible to produce the short-circuit.

REFERENCES:
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patent: 4277793 (1981-07-01), Webb
patent: 4490709 (1984-12-01), Hammond et al.
patent: 4555622 (1985-11-01), Gless et al.
patent: 4556790 (1985-12-01), Gless et al.
IEEE Transactions on Electron Devices, vol. ED-27, No. 1, Jan. 1980, pp. 62-65.
Electronics Letters, vol. 18, No. 20, Sep. 1982, pp. 885-887.
Applied Physics Letters, vol. 39, No. 6, 15.9.1981, pp. 480-482.
Applied Physics Letters, vol. 44, No. 1, 1.1.1984, pp. 77-79.

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