Optoelectronic semiconductor laser device having compound semico

Details Optoelectronic semiconductor laser device having compound semico Optoelectronic semiconductor laser device having compound semico

1994-04-07

1995-05-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 13, 257 94, 257 98, 372 44, 372 45, H01L 3300, H01S 319

Patent

active

054204461

ABSTRACT:
When a ZnSe, ZnTe or ZnSSe or Zn.sub.1-a Mg.sub.a S.sub.b Se.sub.1-b (0<a<1, 0<b<1) layer provided on a Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y (0<x<1, 0<y<1, a<x) layer is selectively etched by a dry etching method such as an RIE method, the Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y layer is used as an etching stopping layer. Thus, selective etching of the ZnSe, ZnTe, ZnSSe or Zn.sub.1-a Mg.sub.a S.sub.b Se.sub.1-b layer can be conducted with excellent controllability and reproducibility.

REFERENCES:
patent: 5260958 (1993-11-01), Fitzpatrick, Jr.
patent: 5268918 (1993-12-01), Akimoto et al.
patent: 5291507 (1994-03-01), Haase et al.
patent: 5319219 (1994-06-01), Cheng et al.
patent: 5324963 (1994-06-01), Kamata
Okuyama et al., "Znse/ZnMgSSe Blue Laser Diode", Electronics Letters, 9/10/92, vol. 28, No. 19, pp. 1798-1799.
8030 Electronics Letters, 10th Sep. 1992, vol. 28, No. 19, Stevanage, Herts ZnSe/ZnMgSSe Blue Laser Diode, Okuyama et al.
Distributed feedback operation of optically pumped ZnSe quantum-well lasers in the blue-green--Ishihara et al, Appl. Phys. Lett. 60(20), 18 May 1992, pp. 24602462, Ishihara et al.

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