Optoelectronic semiconductor device with mesa

Details Optoelectronic semiconductor device with mesa Optoelectronic semiconductor device with mesa

1993-02-18

1995-04-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 95, 257 96, 257 97, 257 98, 372 45, 372 46, 372 48, 372 50, H01L 3300

Patent

active

054081050

ABSTRACT:
There are disclosed a low driving voltage surface emitting semiconductor laser and an optoelectronic integrated which comprises a two-dimensional array of such surface emitting semiconductor lasers which are modulatable with input signals of small voltage amplitudes. In an embodiment of the present invention, an optical semiconductor device includes a GaAs substrate 105, and an epitaxial growth layer structure on the GaAs substrate, the epitaxial growth layer structure including in the named order a p type GaAs/AlAs multilayer semiconductor mirror layer 104, an active layer 103 and an n type GaAs/AlAs multilayer semiconductor mirror layer 102. The epitaxial growth layer structure is etched to the depth of the active layer in forming a mesa, while the p type mirror layer remains unetched throughout a top surface of the semiconductor substrate.

REFERENCES:
patent: 4943970 (1990-07-01), Bradley
patent: 4991179 (1991-02-01), Deppe et al.
patent: 5052008 (1991-09-01), Kemeny
patent: 5181085 (1993-01-01), Moon et al.
patent: 5206871 (1993-04-01), Deppe et al.
patent: 5283447 (1994-02-01), Olbright et al.

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