Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-11-23
1996-11-26
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257432, 257 81, 257 82, H01L 310232, H01L 2715, H01L 3112, H01L 3300
Patent
active
055788637
ABSTRACT:
An optoelectronic semiconductor device (10) with a radiation-emitting semiconductor diode (3), preferably a diode laser (3), is particularly suitable as a radiation source in optical read and write systems such as bar code readers, laser printers, and optical disc systems. The diode (3) has one or two exit surfaces for radiation (R) which are provided with coatings (4). In such a device (10) it is found that a deposit rich in carbon is formed on the coating (4) of the laser (3), with the result that the output of the diode (3) fluctuates. The deposit may be avoided in that organic impurities are avoided or a selection is carried out in that respect. However, this is cumbersome and expensive.
In a device (10) according to the invention is the diode (3) is present within an envelope (20) which is hermetically sealed off from the outer world (40), and a gaseous oxidizing compound (30) is present inside the envelope (20). It was surprisingly found that a gaseous oxidizing compound (30), preferably oxygen, counteracts or removes a deposit rich in carbon on the coating (4). Since the device (10) is hermetically sealed off from the outer world (40), degradation owing to water vapour or other aggressive gases is counteracted. The device (10) preferably contains dry and clean nitrogen to which at least approximately 0.2 vol. % oxygen (30) has been added. Particularly good results were obtained with a high-power laser (3) and a laser (3) which emits between approximately 0.6 and 0.9 .mu.m.
REFERENCES:
patent: 4585300 (1986-04-01), Landis et al.
patent: 5132532 (1992-07-01), Watanabe
patent: 5414293 (1995-05-01), Broom
"Analysis of Rapid Degradation in High-Power (AlGa) As Laser Diodes" by William J. Fritz, IEEE Journal of Quantum Electronics, vol. 26, No. 1, Jan. 1990, pp. 68-74.
Biren Steven R.
Clark S. V.
Jackson Jerome
U.S. Philips Corporation
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