Optoelectronic semiconductor device

Details Optoelectronic semiconductor device Optoelectronic semiconductor device

1985-04-12

1987-12-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 357 34, 372 46, 372 48, 372 50, H01S 319

Patent

active

047109360

ABSTRACT:
A semiconductor laser device has a double hetero construction such that a direct transition type semiconductor layer having a high refractive index is placed between direct transition type semiconductor layers having a low refractive index, and has an optical resonator formed in the direct transition type semiconductor layer of a high refractive index for enabling lasing operation. The condition of lasing is controllable by the transistor of the double hetero construction. The semiconductor laser device is of transistor structure and yet it constitutes integrated circuits for lasing. As an optoelectronic device, it can be advantageously employed in optical-fiber communication systems and optical information systems.

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patent: 3278814 (1966-10-01), Rutz
patent: 3369132 (1968-02-01), Fang et al.
patent: 4430741 (1984-02-01), Fukuzawa et al.
patent: 4513423 (1985-04-01), Katz et al.
C. P. Lee, S. Maralit, I. Ury and A. Yariv, "Integration of an Injection Laser with Gunn Oscillator on a Semi-Insulating GaAs Substrate", 6/15/78, Amer. Institute of Physics--pp. 806-807.
I. Ury, S. Margalit, M. Yust and A. Yariv, "Monolithic Integration of an Injection Laser and a Metal Semiconductor Field Effect Transistor", 4/1/79, Amer. Institute of Physics--pp. 430-431.
U. Koren, K. L. Yu, T. R. Chen, N. Bar-Chaim, S. Margalit & A. Yariv, "Monolithic Integration of a Very Low Threshold Gain ASP Laser and Metal-Insulator-Semiconductor Field-Effect Transistor on Semi-Insulating InP", 4/15/82, Amer. Institute of Physics--pp. 643-645.
Jun Shibata, Ichiro Nakao, Yoichi Sasai, Soichi Kimura, Nobuyasu Hase and Hiroyuki Serizawa, "Monolithic Integration of an InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistors", 8/1/84, Amer. Institute of Physics--pp. 191-193.

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