Optoelectronic quantum well device having an optical resonant ca

Details Optoelectronic quantum well device having an optical resonant ca Optoelectronic quantum well device having an optical resonant ca

1996-11-18

1998-10-06

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 96, 257 98, 257184, 257432, H01L 2906, H01L 3300

Patent

active

058180664

ABSTRACT:
An optoelectronic quantum well device comprises a stack of layers that have different gap widths and constitute quantum wells possessing, in the conduction band, at least two permitted energy levels, this stack of layers being included between two reflection means. The device also comprises a diffraction grating between one of the mirrors and the stack of layers.

REFERENCES:
"Normal Incidence Intersubband Absorption In Vertical Quantum Wells," V. Berger et al. Applied Physics Letter; vol. 66, No. 2, Jan. 9, 1995, pp. 218-220.
"Grating Enhancement Of Quantum Well Detector Response," K. W. Goossen et al. Applied Physics Letters; vol. 53, No. 12, Sep. 19, 1988. pp. 1027-1029.
"Near-Unity Quantum Efficiency of AlGaAs/GaAs Quantum Well Infrared Detectors Using A Waveguide With A Doubly Periodic Grating Coupler," J. Y. Andersson et al. Applied Physics Letters; vol. 59, No. 7, Aug. 12, 1991. pp. 857-859.
"Resonant Wavelength Selective Photodetectors," T. Wipiejewski et al. Proceedings Of The European Solid State Device Research Conference (ESSDERC), Leuven, Conference No. 22; Sep. 14-17, 1992.
"Observation Of Grating-Induced Intersubband Emission From GaAs/AlGaAs Superlattices," M. Helm et al. Applied Physics Letters; vol. 53, No. 18, Oct. 31, 1988. pp. 1714-1716.
"Infrared Intraband Laser Induced In A Multiple-Quantum-Well Interband Laser," A. Kastalsky. IEEE Journal Of Quantum Electronics; vol. 29, No. 4, Apr. 1, 1993.

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