Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1996-12-23
1998-01-20
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257184, 257187, 257 96, 257 97, 257103, 257466, 372 48, 372 50, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
057104395
ABSTRACT:
In an optoelectronic integrated device having an optical element section in the wavelength region of 1.33 to 1.55 .mu.m and an electronic element section such as an HEMT integrated in a monolithic form on a GaAs substrate, the optical element section includes light receiving elements or light emitting elements, and an optical absorption layer of the light receiving element or a semiconductor layer forming an active layer of the light emitting element is formed of GaAsN-series compound semiconductor which is lattice-matching with the GaAs substrate, particularly, one of GaAsN, InGaAsN, InGaAsPN, GaAlAsN, InGalAsN, AlGaAsPN and InGaAlAsPN.
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Mintel William
The Furukawa Electric Co. Ltd.
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