Optoelectronic integrated device

Details Optoelectronic integrated device Optoelectronic integrated device

1995-07-05

1997-10-21

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257 13, 257 85, 257190, 372 50, H01L 2715

Patent

active

056799640

ABSTRACT:
The optoelectronic integrated device includes a semiconductor substrate, a vertical-cavity surface-emitting semiconductor laser formed on the semiconductor substrate, a phototransistor stacked over the vertical-cavity surface emitting semiconductor laser, for driving the vertical-cavity surface-emitting semiconductor laser, and a semiconductor buffer structure interposed between the vertical-cavity surface-emitting semiconductor laser and the phototransistor. The vertical-cavity surface-emitting semiconductor laser includes: a bottom semiconductor mirror; a top semiconductor mirror; and an active region interposed between the bottom semiconductor mirror and the top semiconductor mirror and having a strained quantum well structure for emitting light having a wavelength of .lambda.. The phototransistor includes: a collector layer; an emitter layer; and a base layer interposed between the collector layer and the emitter layer and absorbing light having a wavelength of .lambda.. The semiconductor buffer structure includes: a first surface facing the phototransistor and having a lattice constant substantially lattice-matching with the base layer, and a second surface facing the vertical-cavity surface-emitting semiconductor laser.

REFERENCES:
patent: 5216686 (1993-06-01), Holm et al.
patent: 5283447 (1994-02-01), Olbright et al.
patent: 5387796 (1995-02-01), Joshi et al.
patent: 5393994 (1995-02-01), Kobayashi et al.
patent: 5408105 (1995-04-01), Adachi et al.

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