Optoelectronic integrated circuit

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357 15, 357 64, H01L 2948, H01L 2714, H01L 2348

Patent

active

051152940

ABSTRACT:
A new MSM photodetector, including a photoabsorbing layer of ternary or quaternary III-V compound semiconductor material, is disclosed. This new photodetector is significant because it exhibits a relatively small dark current and a correspondingly large signal-to-noise ratio. Moreover, the photodetector is readily integrable with electronic integrated circuits and is relatively easy to fabricate.

REFERENCES:
patent: 4203780 (1980-05-01), Matsushita et al.
patent: 4357180 (1982-11-01), Molnar
patent: 4390889 (1983-06-01), Capasso et al.
patent: 4490709 (1984-12-01), Hammond et al.
patent: 4679061 (1987-07-01), Capasso et al.
patent: 4739385 (1988-04-01), Bethea et al.
patent: 4763176 (1988-08-01), Ito
patent: 4819036 (1989-04-01), Kuroda et al.
patent: 4929564 (1990-05-01), Kainasho et al.
Wolf, Semiconductors, pp. 223-228, 1971.
Schneider, "Schottky Barrier Photodiode w/Antireflection Coating", Nov. 1966, pp. 1611-1615.
Chang et al., Monolithically Integrated Receiver Front End; Sep. 1988, pp. 1439-1443 of IEEE.
Hong et al., High-Performance Al.sub.0.15 Ga.sub.0.85 As/In.sub.0.53 Ga.sub.0.47 As: Apr. 1989, pp. 659-661 of IEEE.
Rogers, D. L., "Monolithic Integration of a 3-GHz Detector/Preamplifier Using a Refractory-Gate, Ion-Implanted MESFET Process", IEEE Electron Device Letts., vol. EDL-7, No. 11, Nov. 1986, pp. 600-602.
Schumacher, H. et al., "An Investigation of the Optoelectronic Response of GaAs/InGaAs MSM Photodetectors", IEEE Electron Device Letts., vol. 9, No. 11, Nov. 1988, pp. 607-609.
Wada, O. et al., "Very High Speed GaInAs Metal-Semiconductor-Metal Photodiode Incorporating an AlInAs/GaInAs Graded Superlattice", Appl. Phys. Lett., vol. 54, No. 1, Jan. 2, 1989, pp. 16-17.

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