Optoelectronic devices using persistent photoconductivity

Details Optoelectronic devices using persistent photoconductivity Optoelectronic devices using persistent photoconductivity

1996-05-31

1999-07-06

Spyrou, Cassandra

Optical: systems and elements

Holographic system or element

Using a hologram as an optical element

359 3, 359 6, 359 9, 257431, 257432, G03H 102, G03H 108, G02B 532, H01L 2714

Patent

active

059204095

ABSTRACT:
A compound semiconductor that is suitably doped to exhibit the DX effect is irradiated with an optical beam of spatially varying intensity whereby localized regions of persistently higher conductivity and lower refractive index are created in the semiconductor where sufficient intensity of the beam was incident. The persistently higher conductive region can be used to bridge selected gaps in conductive paths on a support member use in memory device and the regions of lower refractive index can be used to providing guiding in a wave guide, to form high resolution gratings, or to form holograms.

REFERENCES:
patent: 4838630 (1989-06-01), Jannson et al.
patent: 4927220 (1990-05-01), Hesselink et al.
patent: 4948212 (1990-08-01), Cheng et al.
patent: 5072122 (1991-12-01), Jiang et al.
patent: 5237434 (1993-08-01), Feldman et al.
patent: 5305123 (1994-04-01), Sadornik et al.
Raymond K. Kostuk et al, "Design considerations for holographic optical interconnects", Applied Optics, vol. 26, No. 18, Sep. 15, 1987, pp. 3947-3953.
L.H. Lin et al, "Efficient and Aberration-Free Wavefront Reconstruction from Holograms illuminated at Wavelengths Differing from the Forming Wavelength", Applied Optics, vol. 10, No. 6, Jun. 1971, pp. 1314-1318.
K. Tsubaki et al, "Spatially modulated photoconductivity at N AlGaAs/GaAs heterojunctions and formation of persistent charge patterns with submicron dimensions", Applied Phys. Lett. 45, 663 (1984) pp. 663-665.
David Brady, "Control of volume holograms" J Opt Soc Am A vol. 9, No. 7, Jul. 1992, pp. 1167-1182.
Fai H. Mok, "Angle multiplexed storage of 5000 holograms in lithium niobate," Optics Letters, vol. 18, No. 11, Jun. 1, 1993, pp. 915-917.
K. Khachaturyan et al, "Lattice relaxation of DX like donors in Zn.sub.x Cd.sub.1-x Te", Physical Review B, vol. 40 No. 9, Sep. 15, 1989, pp. 6304-6310.

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