Optoelectronic devices based on ZnGeN.sub.2 integrated with grou

Details Optoelectronic devices based on ZnGeN.sub.2 integrated with grou Optoelectronic devices based on ZnGeN.sub.2 integrated with grou

1998-08-20

2000-09-19

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 94, 257 96, 257200, 257613, 257615, 257616, 438 27, 438 29, 438 46, 438 47, 372 44, 372 45, H01L 3300

Patent

active

061216399

ABSTRACT:
Group III-V nitride semiconductors are used as light emitters for other optoelectronic devices. To provide the desired range of bandgap and band offsets in heterostructure devices, InGaN layers have to be grown. InGaN layers are difficult to grow because of lattice mismatch with GaN, and because of problems with homogeneity. Thus, ZnGeN.sub.2 is provided as the active layer in a blue or blue-green light-emitting device. ZnGeN.sub.2 has a bandgap in the blue region of the spectrum and is almost lattice matched to GaN, making it an ideal candidate for integration with group III-V nitrides.

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Maunaye et al., Preparation and Properties of ZnGeN2, Mat. Res. Bull., vol. 5, pp. 793-796, 1970.
Knights et al., High Power Diode Pumped Mid-IR Lasers, Lasers and Electro-Optics Society Annual Meeting, 1993, LEOS '93 Conference Proceedings, IEEE, p. 691, Nov. 1993.
Xing et al., Substrate effects in the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition, J. Appl. Phys. 69 (8), pp 42864291, Apr. 1991.
Dietz et al., Native defect related optical properties of ZnGeP2, Appl. Phys. Lett. 65 (22), pp. 2759-2761, Nov. 1994.
Hopkins et al., Nonlinear Optical Crystal Development at the USAF Wright Laboratory, pp. 914-921.

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