Optoelectronic devices based on intraband transitions in combina

Details Optoelectronic devices based on intraband transitions in combina Optoelectronic devices based on intraband transitions in combina

1989-12-20

1992-01-07

Hille, Rolf

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 17, 357 30, 372 43, 372 45, H01L 2712, H01L 4500, H01L 29161

Patent

active

050796011

ABSTRACT:
The present invention is directed to novel optoelectronic devices, such as light emitters and detectors, that have a unique combination of semiconductor materials that provides a band arrangement resulting in improved efficiency of carrier injection. The devices are quantum well type devices in which discrete electronic states are formed by size quantization effects in the quantum well region. Electromagnetic radiation of emission and absorption occurs by the transition of electrons from a first energy state to a second energy state in either the conduction band or the valence band of the quantum well layer. The bands edges of the layers are offset such that under an appropriate bias, the discrete energy states reside in the bandgap of one of the electrodes and in an allowed region of the other electrode, with one state residing in the conduction band of one electrode and the other state residing in the valence band of the other electrode. The wavelength of the emitted or detected light is inversely proportional to the energy difference between the first and second states. Wavelength customization is facilitated by techniques for adjusting the energy difference.

REFERENCES:
patent: 4679061 (1987-07-01), Capasso et al.
patent: 4730207 (1988-03-01), Yamazaki
patent: 4743951 (1988-05-01), Chang et al.
patent: 4760430 (1988-07-01), Coon et al.
patent: 4760579 (1988-07-01), Schulman et al.
patent: 4780749 (1988-10-01), Schulman et al.
patent: 4806993 (1989-02-01), Voisin et al.
patent: 4873555 (1989-10-01), Coon et al.
patent: 4894526 (1990-01-01), Bethea et al.
patent: 4903101 (1990-02-01), Maserjian
patent: 4916495 (1990-04-01), Awano
patent: 4918496 (1990-04-01), Matsushima et al.
patent: 4933728 (1990-06-01), Fukuzawa et al.
patent: 4941025 (1990-07-01), Tabatabaie
Shotov et al., "PbS/Pb.S.Se/Pb.Sn.Se . . . Active Region", Semiconductor Science Technology 5 (1990), 527-529.
Sweeney et al., "Resonant Interband Tunnel Diode", Appl. Phys. Lett. 54 (6), Feb. 6, 1989.
IBM Technical Disclosure Bulletin, "Negative Resistance Device", vol. 31, No. 7, Dec. 1988.
"Internsubband Emission from Semiconductor Superlattices Excited by Sequential Resonant Tunneling", by M. Helm et al., Physical Review letters, vol. 63(1) 1989.
"Novel infrared band-aligned superlattice laser" by Perng-Fei Yuh and K. L. Wang, Applied Physics Letter S1(18) 1983.
"Polytype Superlattices and Multi-Heterojunctions" by L. Esaki et al., Japanese Journal of Applied Physics 20(7) 1981.
"Electronic Devices Based in Tunneling Between Two-Dimensional Systems" by L. L. Chang and E. E. Mendez, IBM Technical Bulletin vol. 32, No. 3b, 1989.
"Theory and Applications of Band-Aligned Superlattices" by K. L. Wang and Perng-Fei Yuh, IEEE Journal of Quantum Electronics, vol. 25, No. 1, 1989.
"A Bird's-Eye View on the Evolution of Semiconductor Superlattices and Quantum Electronics", vol. QE-22, No. 9, 1986.
"A Perspective In Quantum Structure Development", by L. Esaki.

Affiliated with

Also associated with

Rating

Optoelectronic devices based on intraband transitions in combina does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optoelectronic devices based on intraband transitions in combina, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optoelectronic devices based on intraband transitions in combina will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-825637