Optoelectronic devices

Details Optoelectronic devices Optoelectronic devices

2008-08-14

2011-11-08

Park, Kinam (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010

Reexamination Certificate

active

08054862

ABSTRACT:
Optoelectronic devices are provided. In one embodiment, a device may include a first conductivity type cladding layer including a first barrier layer, an active layer formed on the first conductivity-type cladding layer, the active layer including a well layer made of a nitride semiconductor, and a second conductivity-type cladding layer formed on the active layer and including a second barrier layer. The active layer is positioned between and adjacent to the first barrier layer and the second barrier layer.

REFERENCES:
patent: 7663138 (2010-02-01), Fujikura
patent: 2002/0179923 (2002-12-01), Morita et al.
Park et al., “Optical gain in InGaN/InGaAIN quantum well structures with zero internal field”, Applied Physics Letters 92, 171115 (2008).

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