Optoelectronic devices

Details Optoelectronic devices Optoelectronic devices

2006-08-15

2006-08-15

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S184000, C257S461000, C257S431000, C438S082000, C438S099000

Reexamination Certificate

active

07091516

ABSTRACT:
An optoelectronic device comprising a photoresponsive region located between first and second electrodes such that charge carriers can move between the photoresponsive region and the first and second electrodes, the photoresponsive region comprising: a stack of alternate first and second layers, each first layer comprising a first photoresponsive material and each second layer comprising a second photoresponsive material, the first and second photoresponsive materials having different electron affinities; wherein each pair of second layers on opposite sides of a first layer contact each other via first holes defined by said first layer between said pair of second layers, and each pair of first layers on opposite sides of a second layer contact each other via second holes defined by said second layer between said pair of first layers.

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