Optoelectronic devices

Details Optoelectronic devices Optoelectronic devices

1996-12-13

1999-05-11

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 44, 372 96, H01S3/19

Patent

active

059035854

ABSTRACT:
A single cavity mode optoelectronic device, such as a VCSEL, an RCLED or a DFB laser diode, comprises an etched-pillar or mesa structure including an optically active region and strain-applying means in the form of a layer of polymer material having a coefficient of thermal expansion which is greater than that of the optically active region. The layer surrounds the optically active region so as to apply a compressive strain to the latter so as to compensate at least partially for temperature-induced changes in the gain spectrum peak of the optically active region caused by ohmic heating of the device.

REFERENCES:
patent: 4612645 (1986-09-01), Liu et al.
patent: 4935935 (1990-06-01), Reed et al.
patent: 5642371 (1997-06-01), Tohyama et al.
patent: 5652762 (1997-07-01), Otsuka et al.
patent: 5712865 (1998-01-01), Chow et al.
Search Report for Application No. GB 9603190.1; dated Apr. 23, 1996.
J. L. Jewell et al., IEEE Journal of Quantum Electronics, vol. 27, No. 6, pp. 1332-1346, 1991, "Vertical-Cavity Surface-Emitting Lasers: Design, Growth, Fabrication, Characterization". (Jun.).
E.F. Schubert et al., Science, vol. 265, pp. 943-945, "Highly Efficient Light-Emitting Diodes with Microcavities". (Aug.).
H. Kogelnik et al., Journal of Applied Physics, vol. 43, No. 5, pp. 2327-2335, 1972, "Coupled-Wave Theory of Distributed Feedback Lasers". (May).
M. Nakamura et al., Applied Physics Letters, vol. 25, No. 9, pp. 487-488, 1974 "GaAs.sub.1-X A1.sub.X As double-heterostructure distributed feedback diode lasers". (Nov.).
D. B. Young et al., IEEE Journal of Quantum Electronics, vol. 29, No. 6, pp. 2013-2021, 1993 "Enhanced Performance of Offset-Gain High-Barrier Vertical-Cavity Surface-Emitting Lasers". (Jun.).
E. P. O'Reilly et al., IEEE Journal of Quantum Electronics, vol. 30, No. 2, pp. 366-379, 1994 "Band-Structure Engineering in Strained Semiconductor Lasers". (Feb.).
Y. Kaneko et al., Japanese Journal of Applied Physics, vol. 32, Part 2, No. 11A, pp. L1612-L1614, 1993, "Transverse-Mode Characteristics of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers Considering Gain Offset". (Nov.).
H. -J. J. Yeh et al., Applied Physics Letters, vol. 64, No. 12, pp. 1466-1468, 1994, "Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal". (Mar.).
H. Fathollahnejad et al., Electronics Letters, vol. 30, No. 15, pp. 1235-1236, 1994, "Vertical-cavity surface-emitting lasers integrated onto silicon substrates by PdGe contacts". (Jul.).
Z. L. Liau et al., Applied Physics Letters, vol. 56, No. 8, pp. 737-739, 1990, "Wafer fusion: A novel technique for optelectronic device fabrication and monolithic integration". (Feb.).
G. Chen, Journal of Applied Physics, vol. 77, No. 9, pp. 4251-4258, 1995, "A comparative study on the thermal characteristics of vertical-cavity surface-emitting lasers". (May).
D. A. Cohen, Tuesday Afternoon, CLEO '95, pp. 153-154 "CTuQ5"(May).
European Search Report for Application No. 96309087.3; Dated Mar. 3, 1997.
D. A. Cohen et al.; Applied Physics Letters, vol. 69, No. 4, Jul. 22, 1996, pp. 455-457, "Reduced Temperature Sensitivity of the Wavelength of a Diode Laser in a Stress-Engineered Hydrostatic Package."

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