Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1997-09-26
2000-08-29
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257 86, H01L 3300, H01L 3108
Patent
active
061112712
ABSTRACT:
An optoelectronic device (10) formed in a chip of an indirect bandgap semiconductor material such as silicon is disclosed and claimed. The device comprises a visibly exposed highly doped n.sup.+ region (16) embedded at the surface of an oppositely doped epitaxial layer (14), to form a first junction region (15) closed to the surface of the epitaxial layer. When the junction region is reverse biased to beyond avalanche breakdown, the device acts as a light emitting device to the external environment. When it is reversed biased to just below avalanche breakdown it acts as a light detector. The device may further include a further junction region for generating or providing additional carriers in the first junction region, thereby to improve the performance of the device. This further junction can be multiplied to facilitate multi-input processing functions where the light emission from the first junction is a function of the electrical signals applied to the further junctions.
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Aharoni Herzl
DuPlessis Monuko
Snyman Lukas W.
Jackson, Jr. Jerome
Libert Victor E.
Spaeth Frederick A.
University of Pretoria
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