Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-03-08
2005-03-08
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S098000, C257S099000, C257S433000
Reexamination Certificate
active
06864554
ABSTRACT:
An optoelectronic device is disclosed. The optoelectronic device comprises a transparent conductive substrate, an optoelectronic element, and a base. The transparent conductive substrate comprises a transparent plate, a transparent electrode film formed on the transparent plate, and an insulating part formed on the transparent plate. The insulating part divides the transparent electrode film into a first transparent electrode film and a second transparent electrode film that non-conduct each other. The optoelectronic element comprising a positive electrode and a negative electrode is disposed on the transparent conductive substrate and electrically connected to the first transparent electrode film and the second transparent electrode film individually. The base is formed with an opening that has a reflective surface on the bottom of the opening, and the optoelectronic element is held in the opening in a manner of suspending from or connecting with the bottom of the opening.
REFERENCES:
patent: 5367441 (1994-11-01), Wustlich
patent: 6459130 (2002-10-01), Arndt et al.
patent: 6641287 (2003-11-01), Suehiro
Lin Ming-Der
Wang Kwang-Ru
Highlink Technology Corporation
Munson Gene M.
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