Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
Reexamination Certificate
2007-08-21
2007-08-21
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
With high resistivity
C257S010000, C257S227000, C257S292000, C257S458000
Reexamination Certificate
active
10895517
ABSTRACT:
In one embodiment, an optoelectronic device is provided having a pin photo diode including a semi-insulating substrate or layer, with a patterned implant region of a first dopant type. The pin photo diode includes an upper layer having semiconductor material with a second dopant type. An intermediate layer is provided having a substantially intrinsic semiconductor material. An upper layer contact is provided having a portion with a generally circular interior facing edge. The implant region has a first portion having an outer periphery substantially nonoverlapping with the interior facing edge of the upper layer contact. The implant region includes a contact portion located beyond the upper layer contact. A connecting portion couples the first portion and the contact portion of the implant region. In one embodiment, the device includes a heterojunction bipolar transistor coupled to the pin photo diode. The transistor may have a patterned implant region in the semi-insulating substrate or layer comprising the first dopant type.
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Chen Mary Y.
Hitko Donald A.
Batzan, Esq. Christopher R.
HRL Laboratories LLC
Soward Ida M.
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