Optoelectronic device with germanium photodetector

Details Optoelectronic device with germanium photodetector Optoelectronic device with germanium photodetector

2011-08-16

2011-08-16

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S453000, C257S455000, C257SE31011, C257SE21158, C438S063000, C438S069000, C438S093000, C438S098000

Reexamination Certificate

active

07999344

ABSTRACT:
An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.

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