Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-06-20
1999-07-06
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257 21, 257 22, 257 24, 257 13, H01L 2906
Patent
active
059200782
ABSTRACT:
This invention relates to the field of semiconductor devices. Silicon-based semiconductor devices ordinarily lack desirable optical properties because silicon's small, indirect band gap causes electrons to emit radiation with negligible quantum efficiency. This invention solves that problem by taking advantage of the change in the nature of the electron band gap when electron flow is confined within a one-dimensional channel known as a quantum wire. By biasing the junction between the quantum wire and the surrounding silicon support matrix with a voltage, a semiconductor device of this invention emits radiation of a variable and modulable wavelength, including visible light, as well as of a variable and modulable intensity. Alternatively, the workings of the device may be reversed such that it detects incoming radiation. Given its optical properties, such a device has numerous applications in the field of optoelectronics and integrated circuits.
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