Optoelectronic device using a disabled tunnel junction for...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S045013

Reexamination Certificate

active

06839370

ABSTRACT:
An optoelectronic device such as a vertical cavity surface emitting laser (VCSEL) includes a tunnel junction that conducts a current of holes tunneling into an active region. Tunneling in a selected area of the tunnel junction is disabled to form a current blocking region that confines the current to desired regions. Tunneling can be disabled in the selected area using techniques including but not limited to implanting or diffusing dopants, disrupting crystal structure, or etching to remove part of the tunnel junction.

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Indium Phosphide and Related Materials, 1999. IPRM. 1999 11th International Conference on May 16-20, 1999, IEEE, pp. 211-214, S. Sekiguchi et al. “Selectively formed A1As/InP current confining tunnel junction for GaInAsP/InP surface emitting lasers”.
Boucart, J. et al., “Implantaton Optimization For 1.55 um VCSEL,” 11th International Conference on Indium Phosphide and Related Materials, May 16-20, 1999, Davos, Switzerland, IEEE 0-7803-5562, pp. 87-90 (Aug. 1999).
Ortsiefer, M. et al., “Room temperature Operaton of Index-guided 1.55 um InP-based Vertical-Cavity Surface-emitting Laser,” Electronics Letters, vol. 36, No. 5, pp. 437-439 (Mar. 2, 2000).
Sekiguchi, S. et al., “Selectively Formed AIAs/InP Current Confining Tunnel Junction For GaInAsP/InP Surface Emitting Lasers,” 11th International Conference on Indium Phosphide and Related Materials, May 16-20, 1999, Davos, Switzerland, IEEE 0-7803-5562, pp. 211-214 (Aug. 1999).
Sekiguchi, S. et al., “Long Wavelength GaInAsP/Inp Laser With Automatically Formed Tunneling Aperture,” IEEE 0-7803-6320 pp. 451-454 (May 2000).

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