Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-08-22
2006-08-22
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
active
07094617
ABSTRACT:
An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
REFERENCES:
patent: 6572784 (2003-06-01), Coombs et al.
patent: 6573527 (2003-06-01), Sugiyama et al.
Jpn. J. Appl. Phys. vol. 41 (2002) pp. L299-L301, “Room Temperature 1.58um Photoluminescence . . . ”, S. Chu, et al.
Kang Jin Yeong
Kim Sang Hoon
Shim Kyu Hwan
Song Young Joo
Blakely & Sokoloff, Taylor & Zafman
Electronics and Telecommunications Research Institute
Pham Long
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